nanoplus offers near infrared DFB laser diodes at any wavelength between 760 nm and 830 nm.
Key features:
- Spectral multimode
- Lateral single mode
- Continuous wave
- Room temperature
- Custom wavelengths
Advantages:
- Precise selection of target wavelength
- Typically > 5 mW output power
- Small size
- Easy usability
- High efficiency
- Long-term stability
For over 20 years nanoplus has been the technology leader for lasers in gas sensing. More than 30,000 installations worldwide prove the reliability of nanoplus lasers.
nanoplus FP laser technology
nanoplus uses a unique and patented technology for FP laser diode manufacturing, following a ridge waveguide approach, which is independent of the material system.
Your FP laser requirement
- Select your FP laser at any wavelength between 760 nm and 3000 nm
- Define the wavelength with +/- 20 nmm precision
- Check the typical specifications by choosing the matching wavelength class in the specifications tab
Summary of typical specifications in the 760 nm to 3000 nm range:
For wavelengths between 760 nm and 840 nm:
Parameters (T = 25 °C) |
Symbol |
Unit |
Min |
Typ |
Max |
operating wavelength (at Top, Iop) |
λop |
nm |
-20 |
specify |
+20 |
optical output power (at λop) |
Pop |
mW |
|
10 |
|
operating current |
Iop |
mA |
|
30 |
|
operating voltage |
Vop |
V |
|
3 |
|
threshold current |
Ith |
mA |
|
50 |
|
operating chip temperature |
Top |
°C |
+20 |
+25 |
+50 |
operating case temperature* |
TC |
°C |
-20 |
+25 |
+50 |
storage temperature* |
TS |
°C |
-40 |
+20 |
+80 |
For wavelengths between 840 nm and 1100 nm:
Parameters (T = 25 °C) |
Symbol |
Unit |
Min |
Typ |
Max |
operating wavelength (at Top, Iop) |
λop |
nm |
-20 |
specify |
+20 |
optical output power (at λop) |
Pop |
mW |
|
35 |
|
operating current |
Iop |
mA |
|
70 |
|
operating voltage |
Vop |
V |
|
3 |
|
threshold current |
Ith |
mA |
|
50 |
|
operating chip temperature |
Top |
°C |
+20 |
+25 |
+50 |
operating case temperature* |
TC |
°C |
-20 |
+25 |
+50 |
storage temperature* |
TS |
°C |
-40 |
+20 |
+80 |
For wavelengths between 1100 nm and 1700 nm:
Parameters (T = 25 °C) |
Symbol |
Unit |
Min |
Typ |
Max |
operating wavelength (at Top, Iop) |
λop |
nm |
-20 |
specify |
+20 |
optical output power (at λop) |
Pop |
mW |
|
10 |
|
operating current |
Iop |
mA |
|
45 |
|
operating voltage |
Vop |
V |
|
2 |
|
threshold current |
Ith |
mA |
|
50 |
|
operating chip temperature |
Top |
°C |
+20 |
+25 |
+50 |
operating case temperature* |
TC |
°C |
-20 |
+25 |
+50 |
storage temperature* |
TS |
°C |
-40 |
+20 |
+80 |
For wavelengths between 1700 nm and 2400 nm:
Parameters (T = 25 °C) |
Symbol |
Unit |
Min |
Typ |
Max |
operating wavelength (at Top, Iop) |
λop |
nm |
-20 |
specify |
+20 |
optical output power (at λop) |
Pop |
mW |
|
10 |
|
operating current |
Iop |
mA |
|
120 |
|
operating voltage |
Vop |
V |
|
2 |
|
threshold current |
Ith |
mA |
|
45 |
|
operating chip temperature |
Top |
°C |
+20 |
+25 |
+50 |
operating case temperature* |
TC |
°C |
-20 |
+25 |
+50 |
storage temperature* |
TS |
°C |
-40 |
+20 |
+80 |
For wavelengths between 2400 nm and 3000 nm:
Parameters (T = 25 °C) |
Symbol |
Unit |
Min |
Typ |
Max |
operating wavelength (at Top, Iop) |
λop |
nm |
-20 |
specify |
+20 |
optical output power (at λop) |
Pop |
mW |
|
5 |
|
operating current |
Iop |
mA |
|
100 |
|
operating voltage |
Vop |
V |
|
2 |
|
threshold current |
Ith |
mA |
|
50 |
|
operating chip temperature |
Top |
°C |
+20 |
+25 |
+50 |
operating case temperature* |
TC |
°C |
-20 |
+25 |
+50 |
storage temperature* |
TS |
°C |
-40 |
+20 |
+80 |
High Power Option:
Parameters (T = 25 °C) |
Symbol |
Unit |
Min |
Typ |
Max |
operating wavelength (at Top, Iop) |
λop |
nm |
-20 |
specify |
+20 |
optical output power (at λop) |
Pop |
mW |
|
1000 |
|
operating current |
Iop |
mA |
|
5000 |
|
operating voltage |
Vop |
V |
|
2.5 |
|
threshold current |
Ith |
mA |
|
300 |
|
operating chip temperature* |
Top |
°C |
+15 |
+20 |
+40 |
storage temperature* |
TS |
°C |
-40 |
+20 |
+80 |