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nanoplus Near Infrared DFB Laser Diodes

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Near Infrared (NIR) Distributed Feedback (DFB) Lasers – Wavelengths from 760 – 3000 nm

NIR DFB Laser diodes

nanoplus Nanosystems and Technologies
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nanoplus offers near infrared DFB laser diodes at any wavelength between 760 nm and 830 nm.

 

Key features:

  • Monomode
  • Continuous wave
  • Room temperature
  • Tunable
  • Custom wavelengths

 

Advantages:

  • Stable longitudinal and transversal single mode emission
  • Precise selection of target wavelength
  • Narrow laser linewidth
  • Mode-hop-free wavelength tunability
  • Fast wavelength tuning
  • Typically > 5 mW output power
  • Small size
  • Easy usability
  • High efficiency
  • Long-term stability

 

For over 20 years, nanoplus has been the technology leader for lasers in gas sensing. More than 30,000 installations worldwide prove the reliability of nanoplus lasers.

nanoplus near infrared DFB laser technology
nanoplus uses a unique and patented technology for DFB laser manufacturing, applying a lateral metal grating along the ridge waveguide, which is independent of the material system.

 

Your DFB laser requirement

  • Select your near infrared DFB laser at any wavelength between 760 nm and 14000 nm
  • Define the wavelength with 0.1 nm precision
  • Check the typical specifications for the matching wavelength class in the specifications tab

Summary of typical specifications in the 760 nm to 3000 nm range:

For wavelengths between 760 nm and 830 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 5
operating current Iop mA 30
operating voltage Vop V 3
threshold current Ith mA 5 15 30
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.010 0.020 0.025
temperature tuning coefficient CT nm / K 0.04 0.05 0.07
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 830 nm and 920 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 10
operating current Iop mA 30
operating voltage Vop V 3
threshold current Ith mA 15 20 30
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.004 0.007 0.015
temperature tuning coefficient CT nm / K 0.05 0.07 0.15
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 920 nm and 1100 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 20
operating current Iop mA 50
operating voltage Vop V 3
threshold current Ith mA 15 20 25
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.01 0.02 0.025
temperature tuning coefficient CT nm / K 0.07 0.08 0.09
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 1100 nm and 1300 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 20
operating current Iop mA 70
operating voltage Vop V 2
threshold current Ith mA 12 15 25
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.007 0.01 0.02
temperature tuning coefficient CT nm / K 0.07 0.09 0.1
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 1300 nm and 1650 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 5
operating current Iop mA 70
operating voltage Vop V 2
threshold current Ith mA 10 30 55
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.01 0.02 0.03
temperature tuning coefficient CT nm / K 0.07 0.10 0.14
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 1650 nm and 1850 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 5
operating current Iop mA 70
operating voltage Vop V 2
threshold current Ith mA 10 35 65
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.008 0.02 0.03
temperature tuning coefficient CT nm / K 0.07 0.10 0.14
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 1850 nm and 2200 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 3
operating current Iop mA 100
operating voltage Vop V 2
threshold current Ith mA 5 25 65
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.01 0.020 0.05
temperature tuning coefficient CT nm / K 0.16 0.20 0.23
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 2200 nm and 2600 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 3
operating current Iop mA 100
operating voltage Vop V 2.3
threshold current Ith mA 5 30 50
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.01 0.02 0.05
temperature tuning coefficient CT nm / K 0.18 0.22 0.25
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

For wavelengths between 2600 nm and 2900 nm:
Parameters (T = 25 °C) Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm Please specify to 0.1nm
optical output power (at λop) Pop mW 2
operating current Iop mA 100
operating voltage Vop V 2.3
threshold current Ith mA 30 50 80
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.01 0.02 0.05
temperature tuning coefficient CT nm / K 0.15 0.20 0.28
operating chip temperature Top °C +20 +25 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -40 +20 +80

* non-condensing

Standard DFB Lasers
DFB Top Wavelengths
DFB-Series-Datasheet
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NIR DFB Laser diodes

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