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Interband Cascade Lasers

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DFB Interband Cascade Lasers from 3 µm to 6 µm

Interband Cascade Lasers (ICLs)

nanoplus Nanosystems and Technologies
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DFB Interband Cascade Lasers (ICL) – Nanoplus

DFB Interband Cascade Lasers (ICL) by Nanoplus

Overview of DFB Interband Cascade Lasers

Nanoplus offers a DFB Interband Cascade Laser (ICL) at any target wavelength in the mid-infrared (MIR) spectrum between 3 μm and 6 μm. The device operates in continuous wave (cw) mode around room temperature.

Applications of Tunable Laser Absorption Spectroscopy (TLAS)

The nanoplus DFB ICL enables tunable laser absorption spectroscopy (TLAS) for novel MIR applications in industrial gas sensing. In the 3 μm to 6 μm wavelength window, many industrially relevant trace gases exhibit their strongest absorption bands.

These gases include prevalent molecules such as carbon dioxide (CO2), nitric oxide (NO), and water (H2O), as well as hydrocarbons like methane.

Advantages of DFB Interband Cascade Lasers

  • Accelerate sensing speed
  • Reduce noise
  • Miniaturise the sensor

The nanoplus ICLs are considered for various progressive applications in industry and research, particularly in the oil and gas sector.

Comparison with Other Laser Technologies

Compared to other sensing techniques, such as gas chromatography, TLAS-based sensors offer unmatched advantages of real-time analysis.

Nanoplus DFB ICL technology outperforms other MIR laser technologies, including GaSb-based type I interband diodes and intersubband quantum cascade lasers (QCL).

Award-Winning Technology

The nanoplus DFB interband cascade lasers (ICLs) won the “Prism Award for Green Photonics and Sustainable Energy” in 2012, demonstrating their efficacy in providing solutions for trace gas detection.

Summary of typical specifications in the 2800 nm to 6500 nm range:

Top Wavelength

For wavelengths between 2800 nm and 4000 nm:
Parameters Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm 0.1 nm
optical output power (at λop) Pop mW 10
operating current Iop mA 120
operating voltage Vop V 5
threshold current Ith mA 15 30 50
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.10
temperature tuning coefficient CT nm / K 0.35
operating chip temperature Top °C +10 +20 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -30 +20 +70

* non-condensing

For wavelengths between 4000 nm and 4600 nm:
Parameters Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm 0.1 nm
optical output power (at λop) Pop mW 5
operating current Iop mA 120
operating voltage Vop V 5
threshold current Ith mA 20 40 60
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.12
temperature tuning coefficient CT nm / K 0.45
operating chip temperature Top °C +10 +20 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -30 +20 +70

* non-condensing

For wavelengths between 4600 nm and 5300 nm:
Parameters Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm 0.1 nm
optical output power (at λop) Pop mW 3
operating current Iop mA 120
operating voltage Vop V 5
threshold current Ith mA 30 40 70
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.14
temperature tuning coefficient CT nm / K 0.48
operating chip temperature Top °C +10 +20 +50
operating case temperature* TC °C -20 +25 +50
storage temperature* TS °C -30 +20 +70

* non-condensing

For wavelengths between 5300 nm and 5800 nm:
Parameters Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm 0.1 nm
optical output power (at λop) Pop mW 1
operating current Iop mA 120
operating voltage Vop V 5
threshold current Ith mA 30 40 70
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.15
temperature tuning coefficient CT nm / K 0.5
operating chip temperature Top °C 5 20 50
operating case temperature* TC °C -20 +25 +40
storage temperature* TS °C -30 +20 +70

* non-condensing

 

For wavelengths between 5800 nm and 6500 nm:
Parameters Symbol Unit Min Typ Max
wavelength precision δ nm 0.1
optical output power Pout mW 1
forward current If mA 120
threshold current lth mA 30 40 70
current tuning coefficient CI nm / mA 0.15
temperature tuning coefficient CT nm / K 0.50
typical maximum operating voltage Vop V 5
side mode suppression ratio SMSR dB > 35
storage temperature TS °C -40 +20 +80
operational temperature at case TC °C -20 +20 +45
chip operational temperature Top °C +15 +20 +70
For wavelengths at 3345 nm:
Parameters Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm 3345
optical output power (at λop) Pop mW 40
operating current Iop mA 120
operating voltage Vop V 5
threshold current Ith mA 15 25 40
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.1
temperature tuning coefficient CT nm / K 0.35
operating chip temperature Top °C +15 +20 +40
operating case temperature (non-condensing) TC °C -20 +25 +55
storage temperature (non-condensing) TS °C -30 +20 +70
For wavelengths at 4565 nm:
Parameters Symbol Unit Min Typ Max
operating wavelength (at Top, Iop) λop nm 4565
optical output power (at λop) Pop mW 15
operating current Iop mA 120
operating voltage Vop V 5
threshold current Ith mA 20 30 40
side mode suppression ratio SMSR dB > 35
current tuning coefficient CI nm / mA 0.12
temperature tuning coefficient CT nm / K 0.45
operating chip temperature Top °C +15 +20 +40
operating case temperature (non-condensing) TC °C -20 +25 +55
storage temperature (non-condensing) TS °C -30 +20 +70
ICL-Series-Datasheet

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Interband Cascade Lasers (ICLs)

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