Near Infrared (NIR) Fabry Perot (FP) Lasers – Wavelengths from 760

nanoplus offers near infrared DFB laser diodes at any wavelength between 760 nm and 830 nm.

Key features:

Spectral multimode
Lateral single mode
Continuous wave
Room temperature
Custom wavelengths

Advantages:

Precise selection of target wavelength
Typically > 5 mW output power
Small size
Easy usability
High efficiency
Long-term stability

For over 20 years nanoplus has been the technology leader for lasers in gas sensing. More than 30,000 installations worldwide prove the reliability of nanoplus lasers.

nanoplus FP laser technology
nanoplus uses a unique and patented technology for FP laser diode manufacturing, following a ridge waveguide approach, which is independent of the material system.

Your FP laser requirement

Select your FP laser at any wavelength between 760 nm and 3000 nm
Define the wavelength with +/- 20 nmm precision
Check the typical specifications by choosing the matching wavelength class in the specifications tab

Summary of typical specifications in the 760 nm to 3000 nm range:

760 nm – 840 nm
840 nm – 1100 nm
1100 nm – 1700 nm
1700 nm – 2400 nm
2400 nm – 3000 nm
High Power Option

For wavelengths between 760 nm and 840 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm	-20	specify	+20
optical output power (at λop)	P_op	mW		10
operating current	I_op	mA		30
operating voltage	V_op	V		3
threshold current	I_th	mA		50
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 840 nm and 1100 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm	-20	specify	+20
optical output power (at λop)	P_op	mW		35
operating current	I_op	mA		70
operating voltage	V_op	V		3
threshold current	I_th	mA		50
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 1100 nm and 1700 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm	-20	specify	+20
optical output power (at λop)	P_op	mW		10
operating current	I_op	mA		45
operating voltage	V_op	V		2
threshold current	I_th	mA		50
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 1700 nm and 2400 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm	-20	specify	+20
optical output power (at λop)	P_op	mW		10
operating current	I_op	mA		120
operating voltage	V_op	V		2
threshold current	I_th	mA		45
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 2400 nm and 3000 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm	-20	specify	+20
optical output power (at λop)	P_op	mW		5
operating current	I_op	mA		100
operating voltage	V_op	V		2
threshold current	I_th	mA		50
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

High Power Option:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm	-20	specify	+20
optical output power (at λop)	P_op	mW		1000
operating current	I_op	mA		5000
operating voltage	V_op	V		2.5
threshold current	I_th	mA		300
operating chip temperature*	T_op	°C	+15	+20	+40
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

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Near Infrared (NIR) Fabry Perot (FP) Lasers – Wavelengths from 760 – 3000 nm

NIR FP Laser diodes

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Contact Laser 2000

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