Near Infrared DFB Lasers - 760 ??3000 nm - nanoplus

nanoplus offers near infrared DFB laser diodes at any wavelength between 760 nm and 830 nm.

Key features:

Monomode
Continuous wave
Room temperature
Tunable
Custom wavelengths

Advantages:

Stable longitudinal and transversal single mode emission
Precise selection of target wavelength
Narrow laser linewidth
Mode-hop-free wavelength tunability
Fast wavelength tuning
Typically > 5 mW output power
Small size
Easy usability
High efficiency
Long-term stability

For over 20 years, nanoplus has been the technology leader for lasers in gas sensing. More than 30,000 installations worldwide prove the reliability of nanoplus lasers.

nanoplus near infrared DFB laser technology
nanoplus uses a unique and patented technology for DFB laser manufacturing, applying a lateral metal grating along the ridge waveguide, which is independent of the material system.

Your DFB laser requirement

Select your near infrared DFB laser at any wavelength between 760 nm and 14000 nm
Define the wavelength with 0.1 nm precision
Check the typical specifications for the matching wavelength class in the specifications tab

Summary of typical specifications in the 760 nm to 3000 nm range:

760 nm – 830 nm
830 nm – 920 nm
920 nm – 1100 nm
1100 nm – 1300 nm
1300 nm – 1650 nm
1650 nm – 1850 nm
1850 nm – 2200 nm
2200 nm – 2600 nm
2600 nm – 2900 nm

For wavelengths between 760 nm and 830 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		5
operating current	I_op	mA		30
operating voltage	V_op	V		3
threshold current	I_th	mA	5	15	30
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.010	0.020	0.025
temperature tuning coefficient	C_T	nm / K	0.04	0.05	0.07
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 830 nm and 920 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		10
operating current	I_op	mA		30
operating voltage	V_op	V		3
threshold current	I_th	mA	15	20	30
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.004	0.007	0.015
temperature tuning coefficient	C_T	nm / K	0.05	0.07	0.15
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 920 nm and 1100 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		20
operating current	I_op	mA		50
operating voltage	V_op	V		3
threshold current	I_th	mA	15	20	25
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.01	0.02	0.025
temperature tuning coefficient	C_T	nm / K	0.07	0.08	0.09
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 1100 nm and 1300 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		20
operating current	I_op	mA		70
operating voltage	V_op	V		2
threshold current	I_th	mA	12	15	25
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.007	0.01	0.02
temperature tuning coefficient	C_T	nm / K	0.07	0.09	0.1
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 1300 nm and 1650 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		5
operating current	I_op	mA		70
operating voltage	V_op	V		2
threshold current	I_th	mA	10	30	55
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.01	0.02	0.03
temperature tuning coefficient	C_T	nm / K	0.07	0.10	0.14
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 1650 nm and 1850 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		5
operating current	I_op	mA		70
operating voltage	V_op	V		2
threshold current	I_th	mA	10	35	65
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.008	0.02	0.03
temperature tuning coefficient	C_T	nm / K	0.07	0.10	0.14
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 1850 nm and 2200 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		3
operating current	I_op	mA		100
operating voltage	V_op	V		2
threshold current	I_th	mA	5	25	65
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.01	0.020	0.05
temperature tuning coefficient	C_T	nm / K	0.16	0.20	0.23
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 2200 nm and 2600 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		3
operating current	I_op	mA		100
operating voltage	V_op	V		2.3
threshold current	I_th	mA	5	30	50
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.01	0.02	0.05
temperature tuning coefficient	C_T	nm / K	0.18	0.22	0.25
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

For wavelengths between 2600 nm and 2900 nm:

Parameters (T = 25 °C)	Symbol	Unit	Min	Typ	Max
operating wavelength (at Top, Iop)	λ_op	nm		Please specify to 0.1nm
optical output power (at λop)	P_op	mW		2
operating current	I_op	mA		100
operating voltage	V_op	V		2.3
threshold current	I_th	mA	30	50	80
side mode suppression ratio	SMSR	dB		> 35
current tuning coefficient	C_I	nm / mA	0.01	0.02	0.05
temperature tuning coefficient	C_T	nm / K	0.15	0.20	0.28
operating chip temperature	T_op	°C	+20	+25	+50
operating case temperature*	T_C	°C	-20	+25	+50
storage temperature*	T_S	°C	-40	+20	+80

* non-condensing

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